| 摘要 |
<p>A transparent conductive substrate (1) of a transparent conductive film (12) formed on a translucent substrate (11) is conveyed, without undergoing washing, into the reaction chamber of a plasma device (step (a)), and the transparent conductive film (12) is treated with a plasma employing CH4 gas and H2 gas (step (b)). Subsequent to step (b), semiconductor elements are successively layered onto the transparent conductive film (12) (steps (c), (d)), producing a semiconductor element (10) (step (e)).</p> |
