发明名称 PROGRAMMING METHOD TO TIGHTEN THRESHOLD VOLTAGE WIDTH WITH AVOIDING PROGRAM DISTURB
摘要 <p>A non-volatile storage system that performs a multi-stage programming process to program non-volatile storage to a set of data threshold voltage distributions. The multi-stage programming process includes performing a first stage of the multi-stage programming process to change threshold voltages of at least a subset of the non-volatile storage elements from an erased distribution to one or more intermediate distributions, performing an intermediate stage of the multi-stage programming process to change threshold voltages of at least some of the non- volatile storage elements to appropriate distributions of the data threshold voltage distributions, and performing a later stage of the multi-stage programming process, after performing the intermediate stage of the multi-stage programming process, to tighten only a subset of the data threshold voltage distributions.</p>
申请公布号 WO2014011627(A1) 申请公布日期 2014.01.16
申请号 WO2013US49712 申请日期 2013.07.09
申请人 SANDISK TECHNOLOGIES, INC.;KABUSHIKI KAISHA TOSHIBA;KAMEI, TERUHIKO;TRINH, CUONG;INOUE, ATSUSHI;TAKAHASHI, TOSHIYUKI 发明人 KAMEI, TERUHIKO;TRINH, CUONG;INOUE, ATSUSHI;TAKAHASHI, TOSHIYUKI
分类号 G11C11/56;G11C16/34 主分类号 G11C11/56
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