| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stabilizing resistance characteristics.SOLUTION: A semiconductor device comprises: a first conductivity type first well region 11A formed in a semiconductor substrate 10; a first conductivity type second well region 11B formed so as to be separated from the well region 11A in a lateral direction; intermediate insulating films 20 and 21 coating the semiconductor substrate 10; first and second resistive layers 32A and 32B formed on the intermediate insulating films 20 and 21; and a conductive layer 33B formed immediately above the semiconductor region between the first well region 11A and the second well region 11B. The first resistive layer 32A and the first well region 11A configure a first resistive element, and the second resistive layer 32B and the second well region 11B configure a second resistive element. The intermediate insulating films 20 and 21 are interposed between the conductive layer 33B and the semiconductor region. The conductive layer 33B is fixed at a potential not forming an inversion layer to the semiconductor region. |
