发明名称 |
METHOD OF FABRICATING SINGLE-LAYER GRAPHENE |
摘要 |
A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene. |
申请公布号 |
US2014014970(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201313937563 |
申请日期 |
2013.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
WOO YUN-SUNG;YOON SEON-MI;SHIN HYEON-JIN;LEE DONG-WOOK;CHOI JAE-YOUNG |
分类号 |
H01L21/02;H01L29/16 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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