| 摘要 |
<p>A plasma treatment device is provided with: a chamber (1) for accommodating a substrate to be treated; gas supply mechanisms (25, 27) for supplying gas into the chamber (1); and a plurality of microwave emission units (41) which emit microwaves into the chamber (1). The plurality of microwave emission units (41) are each provided with a dielectric member (110) which is provided so as to configure one part of a top wall (112) of the chamber (1), and which functions as a microwave transmission window. The plurality of microwave emission units (41) respectively emit microwaves which are transmitted through the dielectric members (110) into the chamber (1). Furthermore, a dielectric panel (111) is provided to a bottom-surface side of the top wall (112) of the chamber (1) so as to cover the top wall (112) including areas where the plurality of microwave emission units (41) are disposed.</p> |
