SEMICONDUCTOR DEVICE AND METHOD THEREOF

摘要

The present invention provides a semiconductor device and A manufacturing method thereof. The semiconductor device comprises a substrate; a semiconductor layer formed at the substrate; a source electrode formed at one side of the semiconductor layer; a drain electrode formed at the other side of the semiconductor layer being separated from the source electrode; a gate electrode formed at the space between the source electrode and drain electrode of the semiconductor layer; and a spin coating layer formed among the source electrode, the drain electrode, and the gate electrode on the semiconductor layer and covering the exposed part of the semiconductor layer with the spin coating of dielectric.