| 摘要 |
A semiconductor device with improved contact resistance characteristics between a silicon substrate (1) and a metal lead layer (11) has a multi-layered insulation film of a non-doped CVD SiO2 film (5) and a boro-phospho-silicate glass film (6) formed on the silicon substrate (1). A contact hole in the SiO2 and glass films exposes an impurity diffused region (8) in the silicon substrate (1), a single crystal silicon layer (7) is formed in the contact hole, and an aluminium film (11) is formed on the semiconductor layer (7).
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