SOI integrated circuit comprising a bipolar transistor with insulating trenches of different depths

摘要

The circuit has a semiconductor substrate (91), and a buried isolating layer (92) arranged between the semiconductor substrate and a layer of silicon (15). An isolating trench (42) is arranged with a base (35), where the trench extends in a depth direction beyond the buried isolating layer. Another isolating trench (43) is arranged between a base contact (33) and a collector (31) and emitter (32). The latter isolating trench extends to a depth beyond the buried isolating layer into a well (34), where the depth is greater than a depth of the former isolating trench.