| 摘要 |
A method for manufacturing a semiconductor device includes: exposing an insulating film including a siloxane bond to an energy beam or plasma; and exposing the insulating film to a gas (excluding N2 and H2O gases) including at least one element selected from the group consisting of hydrogen, carbon, nitrogen and silicon, as an constituent element, wherein, in the exposing to the gas, after a relative permittivity of the insulating film descends by the exposing the insulating film to the gas, the exposing is completed before a time point when the relative permittivity of the insulating film first ascends. |
