SEMICONDUCTOR DEVICE

摘要

The present invention relates to a technique for reducing the propagation of the noise of a harmonic wave component to a substrate due to a signal applied to a TSV. According to the present invention, a semiconductor device includes a TSV penetrating a substrate and receiving a first signal and a bias voltage supply device supplying a bias voltage between the TSV and the substrate to form at least part of a first region defined by a voltage for the substrate of a first signal in a second region. At this time, constant capacitance between the TSV and the substrate is maintained in the second region.