| 摘要 |
PURPOSE: To reduce ON-resistance with its small chip area by forming a gate insulation film on the inner walls of gate grooves which have vertical side walls rising from the surface of a first semiconductor region and deep to reach an opposite conductivity type semiconductor substrate and forming gate-buried electrodes in the gate grooves. CONSTITUTION: Gate grooves deep to reach a bottom face insulation film 8 or opposite-conductivity type semiconductor substrate are arranged in the interior of a first semiconductor region 2 where elements are isolated by a specified method. When a reverse bias is applied, depletion layers 12 expand from a gate insulation film 6 to collide each other, resulting in the OFF-state. When a forward bias is applied, an accumulation layer is produced near the gate insulation film whereby the carrier density is increased to lover the ON- resistance. |
