| 摘要 |
Radio-frequency (RF) switch circuits providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a source, drain, gate, and body. A compensation circuit is connected to the respective source of the at least one FET. The compensation circuit may be configured to compensate a non-linearity effect generated by the at least one FET. |
