NEAR UV LIGHT EMITTING DEVICE

摘要

The present invention discloses a near-ultraviolet light emitting device. The light emitting device includes an n-type contact layer including a gallium nitride film, a p-type contact layer including a gallium nitride film, and an active area positioned between the n-type contact layer and the p-type contact layer with a multiple quantum well structure, wherein the active area releases the near ultraviolet ray within a range of 365nm to 390nm.