| 摘要 |
A system including a read module to perform a first read operation to determine a state of a memory cell, and in response to a first failure to decode data read from the memory cell, perform second and third read operations to determine the state of the memory cell. The memory cell has first and second threshold voltages when programmed to first and second states, respectively. A shift detection module detects, in response to a second failure to decode data read from the memory cell in the second and third read operations, a shift in a distribution of at least one of the first and second threshold voltages. A binning module divides the distribution into a plurality of bins. A log-likelihood ratio (LLR) module generates LLRs for the plurality of bins based on a variance of the distribution and adjusts the LLRs based on an amount of the shift. |
