ANTIFUSE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

Disclosed are an anti-fuse of a semiconductor device and a manufacturing method thereof capable of controlling a damaged position of an insulating film and improving resistor distribution after damaging the insulating film. The anti-fuse of the semiconductor device comprises a source and a drain which are separated from each other on a substrate; a gate insulating film which is formed on the substrate; and a gate electrode which is formed on the gate insulating film. One side of the gate insulating film touches the source. The other side of the gate insulating film touches the drain. The thickness of at least one of the sides of the gate insulating film is thinner than the thickness of the center unit.