| 摘要 |
The invention relates to a magnetic device comprising at least one memory point (1) comprising: a reference layer (2) having a variable magnetising direction; a storage layer (3) having a variable magnetising direction; a spacer (4) between the reference layer (2) and the storage layer (3); and means that can send a transverse electron current through the memory point (1). The magnetic device also comprises: a reference line (7) in contact with the reference layer (2); and injection means (8, 9) that can inject a spin-polarised electron current at each end (15, 16) of the reference line (7) in such a way as to return the magnetisation of the reference line (7) by the propagation of a magnetic wall through the reference line (7). |
