发明名称 Exclusion zone for stress-sensitive circuit design
摘要 A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits. The exclusion zone preferably includes corner regions of the semiconductor chip, wherein the corner regions preferably have a diagonal length of less than about one percent of the diagonal length of the semiconductor chip. The stress-sensitive analog circuits preferably include devices having channel lengths less than about five times the minimum channel length.
申请公布号 US8624346(B2) 申请公布日期 2014.01.07
申请号 US20060324967 申请日期 2006.01.03
申请人 SU CHAO-YUAN;LIN CHUNG-YI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SU CHAO-YUAN;LIN CHUNG-YI
分类号 H01L23/29 主分类号 H01L23/29
代理机构 代理人
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