发明名称 Light emitting device and driving method thereof
摘要 According to a driving method of applying a reverse bias voltage, capacitance occurs due to a stacked structure of a conductor, an insulator and a conductor, or due to a structure of a TFT. This capacitance prevents normal operation. The invention provides a pixel configuration including at least a driving transistor for driving a light emitting element and a switching transistor for controlling the driving transistor, wherein the switching transistor is turned on in the case of applying a forward bias voltage after applying a reverse bias voltage. As a result, it is prevented that the potential changes due to unwanted capacitive coupling.
申请公布号 US8624807(B2) 申请公布日期 2014.01.07
申请号 US20100945310 申请日期 2010.11.12
申请人 MIYAKE HIROYUKI;FUKUMOTO RYOTA;IWABUCHI TOMOYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAKE HIROYUKI;FUKUMOTO RYOTA;IWABUCHI TOMOYUKI
分类号 G09G3/32 主分类号 G09G3/32
代理机构 代理人
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