METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE ON THE BASIS OF LEAD SELENIDE

摘要

The method for manufacturing a semiconductor structure on the basis of lead selenide, said structure comprising a substrate and a lead selenide film, comprises forming a semicrystalline lead selenide film and subjecting said film to subsequent heat treatment in an oxygen-containing medium. Furthermore, the semicrystalline lead selenide film is formed on a substrate, which is formed from a material having a temperature coefficient of linear expansion lying within the range of from 10s10-6 °C-1 to 26s10-6 °C-1.