METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS

摘要

A metal-organic chemical vapor deposition apparatus is provided to prevent the occurrence of heat convection resulting from top and bottom temperature difference inside the chamber. A metal-organic chemical vapor deposition apparatus(100) comprises: a process chamber(110) which an upper lid(111) opened downward and a lower lid(112) opened upward and forms a cavity of fixed size when the top and bottom parts are meshed; a wafer mounting part(120) which has upper and lower susceptors(121,122) which are combined to upper and lower hollow shafts(125,126) equipped on the upper and lower lids and in which one or more wafers are placed in the facing surfaces of the upper and lower susceptors; a heating part(130) which has an upper heater(131) provided between the upper lid and the upper susceptor and a lower heater(132) provided between the lower lid and the lower susceptor and provides radiation to the upper and lower susceptors; a driving unit(140) which rotates around the upper and lower hollow shafts to make the upper and lower susceptors rotate in a specific direction; a gas feed part which has upper and lower gas supply inlets(151,152) connected to the upper and lower hollow shafts and supplies a reaction gas between the facing surfaces of the upper and lower susceptors through a supply nozzle(153) connecting the upper and lower hollow shafts; and a gas exhaust part(160) which is arranged to contact the rim of the upper and lower lids and connected to the internal space of the process chamber in order to discharge the used reaction gas.