发明名称 |
Flash memory device with selective gate within a substrate and method of fabricating the same |
摘要 |
A flash memory device with selective gate within a substrate and method of fabricating the same. The flash memory device comprises a substrate with a floating gate disposed thereon. A wordline extends along a first direction and overlies the floating gate and the adjacent substrate thereof. A trench is disposed in the substrate adjacent to one side of the wordline. A selective gate is vertically disposed in the trench, partially covering the floating gate. A source region is disposed in the substrate adjacent to the other side of the wordline and a drain region is disposed in the substrate beneath the selective gate.
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申请公布号 |
US2004183124(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20030666118 |
申请日期 |
2003.09.19 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
HSU CHENG-YUAN;HUNG CHIH-WEI;WU CHI-SHAN;HUANG VINCENT |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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