发明名称 Power transistor with heat dissipation and method therefore
摘要 <p>A device comprising a substrate (12), an integrated circuit (IC) die (18) attached to the substrate on one side, a plurality of contact pads (40, 42, 44) on an active side (19) of the IC die, a plurality of thermally and electrically conductive legs (28-32), each of the legs attached to a respective one of the contact pads (40, 42, 44), and an encapsulating material (46) formed around the substrate, the IC die, and a portion of the legs. A contact end (58, 60, 62) of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor (90) in the IC die.</p>
申请公布号 EP2680306(A1) 申请公布日期 2014.01.01
申请号 EP20130172879 申请日期 2013.06.19
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 DING, MIN
分类号 H01L23/495;H01L23/433 主分类号 H01L23/495
代理机构 代理人
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