| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device (in particular, a P-channel MOSFET) having an easy-to-use gate threshold voltage even when a high-dielectric-constant film is used for a gate insulation film of a minute MOSFET; and its manufacturing method. <P>SOLUTION: In this semiconductor device, a gate electrode, a high-dielectric-constant insulation film containing aluminum and having relative permeability larger than that of a silicon oxide film, a silicon oxide film and a silicon substrate are formed, and a diffusion layer formed by diffusing aluminum atoms or aluminum ions is formed on the silicon oxide film or the interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or mixed film of hafnium oxide and aluminum oxide at a ratio of 2:8 to 8:2 is used for the high-dielectric-constant insulation film. The heat treatment is executed at a temperature of 500-1,000°C and for about 1-100 sec. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
