| 摘要 |
FIELD: physics. ^ SUBSTANCE: in method for manufacture of multiple-unit photoreceiving crystal based on MIS structures, InAs substrate is coated with SiO2 layer, in which through windows are formed lithographically to determine photosensitive area for photoreceiving crystals. Then substrate-gate insulator interface is formed on substrate in windows by means of anode oxidation. Area of window formed in SiO2 is specified with the possibility to cover area of all photosensitive elements of photoreceiving crystal. Then layer of gate insulator SiO2 is deposited onto layer of anode oxide with thickness of 1015 nm, and photosensitive elements are formed by creation of gates from ln2O3 on gate insulator. Conductive buses are made, which are withdrawn outside the limits of photosensitive area away from gates of photosensitive elements. ^ EFFECT: improved electro-optic isolation of elements due to suppression of photosensitivity in area of conductive buses. ^ 8 cl, 4 dwg |
