| 摘要 |
A method for forming the copper wiring is provided to increase the semiconductor produce yield by using the nitride film generated in the surface of semiconductor substrate. The via hole is formed on the insulating layer(IMD)(300) in the semiconductor substrate. The via hole is filled with the novolak resin which is a photosensitive material. The nitride film is formed on the semiconductor substrate by performing the nitrogen(N) ion implantation process. The trench for the copper wiring formation is formed at the upper part of the via hole. The novolak resin is removed from the trench. The copper wiring film(310) is formed in the trench and via hole by the EMP method. The copper wiring is formed by depositing copper in the trench and via hole. The nitride film is removed by performing CMP on the surface of semiconductor substrate.
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