LIGHT EMITTING DIODE WITH CURRENT SPREADING LAYERS AND MANUFACTURING METHOD FOR LIGHT EMITTING DIODE

摘要

Provided is a light emitting diode with current spreading layers. The light emitting diode at least comprises: an n-side layer and a p-side layer which are respectively formed by a nitride semiconductor and an active layer (204) consisting of a nitride semiconductor, wherein the active layer (204) is arranged between the n-side layer and the p-side layer; the n-side layer is formed by sequentially laminating an extrinsic doping buffer layer (202) and a compound multi-current spreading layer (203); the compound multi-current spreading layer (203) is formed by sequentially laminating a first current spreading layer (203a), a second current spreading layer (203b) and a third current spreading layer (203c); the first current spreading layer (203a) and the third current spreading layer (203c) are formed by interactively laminating a u-shaped nitride semiconductor layer and an n-shaped nitride semiconductor layer; the second current spreading layer (203b) is a distributed insulating layer formed on the n-shaped nitride semiconductor layer; the first current spreading layer (203a) is adjacent to the extrinsic doping buffer layer (202); and the third current spreading layer (203c) is adjacent to the active layer (204).