| 摘要 |
The invention relates to a method of collective manufacturing of light-emitting diode (LED) devices comprising formation of elemental structures (150) each comprising an n- type layer (132), an active layer (133) and a p-type layer (134), the method comprising: - reduction of the lateral dimensions of part of each elemental LED structure (150); - formation of a portion of insulating material (139) on the sides of the elemental structures (150); - formation of n-type electrical contact pads (145) and p-type electrical contact pads (138); - deposition of a conductive material layer (141) on the elemental structures (150) and polishing of the conductive material layer (141); and - bonding by molecular adhesion of a second substrate (50) on the polished surface (70a) of said structure (70). |
