METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

The purpose of the present invention is to provide: a method for manufacturing a thin film transistor having high mobility by forming a transparent amorphous oxide semiconductor layer by a liquid phase method and carrying out an annealing treatment at relatively low temperature; and a thin film transistor which is manufactured by this method. A method for manufacturing a thin film transistor according to the present invention comprises: a step for forming a gate electrode; a step for forming a gate insulating film that is in contact with the gate electrode; and a step for forming an oxide semiconductor layer by a liquid phase method, said oxide semiconductor layer being arranged to face the gate electrode with the gate insulating film therebetween and having a first region that is represented by In(a)Ga(b)Zn(c)O(d) (wherein a >= 0, b >= 0, c >= 0, a + b + c = 1 and d > 0) and satisfies b <= 1/3 and b >= -10a/7 + 1 and a second region that is represented by In(e)Ga(f)Zn(g)O(h) (wherein e >= 0, f >= 0, g >= 0, e + f > 0 and h > 0) and positioned further from the gate electrode than the first region.