发明名称 METHOD FOR DETERMINING PN JUNCTION DEPTH
摘要 <p>A method for determining PN junction depth comprises steps as follows: a) measuring a square resistance in a well region (S101); b) forming a junction type field effect transistor in the well region, changing a gate electrode voltage and measuring a source-drain resistance (S102); c) calculating the PN junction depth according to the measured square resistance, source-drain resistance and relative technical parameters of the junction type field effect transistor (S103). Determining the PN junction depth according to the electrical measurement is simple and feasible, and has better repeatability.</p>
申请公布号 WO2013189132(A1) 申请公布日期 2013.12.27
申请号 WO2012CN81780 申请日期 2012.09.21
申请人 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES;BU, JIANHUI;BI, JINSHUN;LUO, JIAJUN;HAN, ZHENGSHENG 发明人 BU, JIANHUI;BI, JINSHUN;LUO, JIAJUN;HAN, ZHENGSHENG
分类号 H01L21/66 主分类号 H01L21/66
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