<p>A method for determining PN junction depth comprises steps as follows: a) measuring a square resistance in a well region (S101); b) forming a junction type field effect transistor in the well region, changing a gate electrode voltage and measuring a source-drain resistance (S102); c) calculating the PN junction depth according to the measured square resistance, source-drain resistance and relative technical parameters of the junction type field effect transistor (S103). Determining the PN junction depth according to the electrical measurement is simple and feasible, and has better repeatability.</p>
申请公布号
WO2013189132(A1)
申请公布日期
2013.12.27
申请号
WO2012CN81780
申请日期
2012.09.21
申请人
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES;BU, JIANHUI;BI, JINSHUN;LUO, JIAJUN;HAN, ZHENGSHENG
发明人
BU, JIANHUI;BI, JINSHUN;LUO, JIAJUN;HAN, ZHENGSHENG