发明名称 PATTERN FORMING METHOD, COMPOSITION USED FOR THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a pattern forming method by which a trench pattern or a hole pattern having an ultrafine width or hole diameter can be formed while generation of blob defects is sufficiently reduced, and to provide a composition used for the method, a method for manufacturing an electronic device, and an electronic device.SOLUTION: A pattern forming method includes: a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), which contains a resin (A) showing an increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent, and a compound (B) generating an acid by irradiation with actinic rays or radiation, and exposing and developing the first film to form a negative pattern; and a step of forming a second film on the negative pattern by using a composition (II), which contains a compound (A') showing an increase in the polarity by an action of an acid to decrease the solubility with a removing solution containing an organic solvent, and removing a region where an acid generating from the compound (B) does not react with the compound (A'), by using a removing solution.
申请公布号 JP2013257435(A) 申请公布日期 2013.12.26
申请号 JP20120133229 申请日期 2012.06.12
申请人 FUJIFILM CORP 发明人 YAMAMOTO KEI;UEBA RYOSUKE
分类号 G03F7/40;G03F7/038;G03F7/039;G03F7/32;H01L21/027 主分类号 G03F7/40
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