| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having an oxide semiconductor layer that is excellent in switching characteristics and stress resistance, and especially has small variation in a threshold voltage before and after stress is added, and is excellent in stability.SOLUTION: A thin-film transistor includes at least, on a substrate, a gate electrode; a gate insulating film; an oxide semiconductor layer; a source-drain electrode; and a protective film protecting the gate insulating film, the oxide semiconductor layer, and the source-drain electrode. The oxide semiconductor layer is a stack having a second oxide semiconductor layer composed of In, Zn, Sn, and O and a first oxide semiconductor layer composed of In, Ga, Zn, and O. The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the protective film. |
