发明名称 |
Metal Control Gate Structures And Air Gap Isolation In Non-Volatile Memory |
摘要 |
High-density semiconductor memory utilizing metal control gate structures and air gap electrical isolation between discrete devices in these types of structures are provided. During gate formation and definition, etching the metal control gate layer(s) is separated from etching the charge storage layer to form protective sidewall spacers along the vertical sidewalls of the metal control gate layer(s). The sidewall spacers encapsulate the metal control gate layer(s) while etching the charge storage material to avoid contamination of the charge storage and tunnel dielectric materials. Electrical isolation is provided, at least in part, by air gaps that are formed in the row direction and/or air gaps that are formed in the column direction. |
申请公布号 |
US2013334587(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201313947530 |
申请日期 |
2013.07.22 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
PURAYATH VINOD ROBERT;PHAM TUAN;KINOSHITA HIROYUKI;ZHANG YUAN;CHIN HENRY;KAI JAMES K.;ORIMOTO TAKASHI W.;MATAMIS GEORGE;CHIEN HENRY |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|