SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

There is provided a semiconductor device and a method for fabricating the same. The semiconductor device comprises: a semiconductor substrate; gates, spacers on both sides of the respective gates, and source/drain regions on both sides of the respective spacers, which are formed on the semiconductor substrate; lower contacts located on the respective source/drain regions and abutting outer-sidewalls of the spacers, with bottoms covering at least a portion of the respective source/drain regions; an inter-layer dielectric layer formed on the gates, the spacers, the source/drain regions, and the lower contacts, wherein the respective source/drain regions of each of the transistor structures are isolated from each other by the inter-layer dielectric layer; and upper contacts formed in the inter-layer dielectric layer and corresponding to the lower contacts. Embodiments of the present invention apply to the fabrication of contacts for semiconductor devices.