| 摘要 |
Techniques are presented for determining effects of process variations on the leakage of an integrated circuit having multiple devices. The operation of the circuit is simulated using a first set of values for the process parameters for the devices and is also simulated with some of the process parameter values varied. For the simulation with the varied values, the circuit is split up into distinct components (such as channeled coupled components, CCCs), where each component has one or more devices, and a process parameters value in a device in each of two or more of these components is varied. |
