发明名称 Semiconductor memory device
摘要 A semiconductor memory device is configured to have a first memory cell array having a plurality of blocks (cell arrays corresponded to one I/O bit), each block having a plurality of columns and being corresponding respectively to one of data terminals, wherein the blocks being arranged side by side in the column-wise direction, and a second memory cell array configured similarly to the first memory cell array, and is also configured to assign addresses while classifying the even-number-th memory blocks in the first memory cell array and the odd-number-th memory blocks in the second memory cell array into a first set, whereas the odd-number-th memory blocks in the first memory cell array and the even-number-th memory blocks in the second memory cell array into a second set, so as to output data from every other block in each memory cell array upon being accessed with a certain address.
申请公布号 US8611174(B2) 申请公布日期 2013.12.17
申请号 US201113279751 申请日期 2011.10.24
申请人 IMOTO HIROYUKI;FUJITSU SEMICONDUCTOR LIMITED 发明人 IMOTO HIROYUKI
分类号 G11C8/00 主分类号 G11C8/00
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