发明名称 METHOD FOR MACHINING WAFER
摘要 The purpose of the present invention is to provide a method for processing a wafer which can clearly divides a wafer, which has a device formed by a functional layer laminated on the surface of a substrate, along streets without lowering the flexure strength of the device. The method for processing a wafer according to the present invention is provided to divide a wafer, which has a device formed by a functional layer laminated on the surface of a substrate, along multiple streets partitioning off the device, and comprises: a process for forming a rule groove, which does not reach a substrate along the street, on a functional layer by irradiating the street with a laser beam which has frequencies absorbing the functional layer; a reforming layer forming process for forming a reforming layer along the street inside the substrate irradiating the area from the other side of the wafer along the street with a laser beam having frequencies capable of transmitting the wafer substrate; and a dividing process for dividing the wafer along the street by applying external power to the wafer provided with the reforming layer.
申请公布号 KR20130137534(A) 申请公布日期 2013.12.17
申请号 KR20130061203 申请日期 2013.05.29
申请人 DISCO CORPORATION 发明人 MORIKAZU HIROSHI
分类号 B23K26/00;B23K26/40;B23K26/42;C03B33/02 主分类号 B23K26/00
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