发明名称 METHOD AND DEVICE FOR FORMING FILM BY SPUTTERING PROCESS
摘要 <p>A method of forming an accumulated film on a specified base body by subjecting a target for film formation arranged in a film forming chamber to sputtering process with the application of plasma generated by the use of sputtering gas, characterized in that adhesion preventive member is arranged in such a manner as surrounding a plasma zone to generate said plasma in the film forming chamber, said preventive member is heat-treated prior to film formation, a specified bias voltage is impressed on said preventive member at the time of film-formation, and, while said preventive member is being cooled, an accumulated film is formed on the base body kept at a specified temperature. Further, the invention relates to a device appropriate for application of the above-said method.</p>
申请公布号 WO1992016671(P1) 申请公布日期 1992.10.01
申请号 JP1992000333 申请日期 1992.03.19
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