发明名称 |
SEMICONDUCTOR FERROELECTRIC STORAGE TRANSISTOR AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body (11) and a gate electrode conductor (4) are sequentially laminated in this order on a semiconductor base (10) that has a source region (12) and a drain region (13). The insulating body (11) is configured by laminating a first insulating body (1) and a second insulating body (2) in this order on the base (10), and the second insulating body (2) is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.</p> |
申请公布号 |
WO2013183547(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
WO2013JP65107 |
申请日期 |
2013.05.30 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
SAKAI SHIGEKI;ZHANG WEI;TAKAHASHI MITSUE |
分类号 |
H01L21/8246;C23C14/08;H01L27/105 |
主分类号 |
H01L21/8246 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|