发明名称 DATA WRITING METHOD FOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method by which a writing performance in a storage device having a nonvolatile memory unit.SOLUTION: A data writing method for a storage device including a nonvolatile memory unit having a memory cell array constituted by nonvolatile memory cells, includes the steps of: receiving a writing request and writing data associated with the writing request; detecting, in response to the writing request, the number of usable free blocks at the memory cell array; allocating a log block by the unit of a block when the number of detected free blocks is smaller than a threshold value, and allocating a log block by the unit of a physical block or by the unit of a sub block smaller than the physical block when the number of detected free blocks is equal to or more than a threshold value; and writing writing data in an allocated log block.
申请公布号 JP2013250982(A) 申请公布日期 2013.12.12
申请号 JP20130116938 申请日期 2013.06.03
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE JOONHO;BAEK JONG-NAM;HAM DONG-HOON;RYU SOKYOKU;HWANG INTAE
分类号 G06F12/02;G06F12/00;G11C16/02;G11C16/04 主分类号 G06F12/02
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