发明名称 |
DATA WRITING METHOD FOR STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a writing performance in a storage device having a nonvolatile memory unit.SOLUTION: A data writing method for a storage device including a nonvolatile memory unit having a memory cell array constituted by nonvolatile memory cells, includes the steps of: receiving a writing request and writing data associated with the writing request; detecting, in response to the writing request, the number of usable free blocks at the memory cell array; allocating a log block by the unit of a block when the number of detected free blocks is smaller than a threshold value, and allocating a log block by the unit of a physical block or by the unit of a sub block smaller than the physical block when the number of detected free blocks is equal to or more than a threshold value; and writing writing data in an allocated log block. |
申请公布号 |
JP2013250982(A) |
申请公布日期 |
2013.12.12 |
申请号 |
JP20130116938 |
申请日期 |
2013.06.03 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE JOONHO;BAEK JONG-NAM;HAM DONG-HOON;RYU SOKYOKU;HWANG INTAE |
分类号 |
G06F12/02;G06F12/00;G11C16/02;G11C16/04 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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