| 摘要 |
A buffer layer structure for an LED is provided. The LED includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer is a composite material, and includes at least one first material and at least one second material that are alternately stacked. The first material and the second material are mutually diffused to generate gradient variation after the buffer layer is processed by a thermal treatment. Thus, an interface effect and thermal stress between difference interfaces are eliminated, and a channel for ion diffusion is blocked for enhancing light-emitting efficiency of the LED. |
