Method of forming thin film polysilicon layer and method of forming thin film transistor

摘要

A method of forming a thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) includes the following steps. A substrate (110, 310, 510) is provided. A heating treatment is then performed. A thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) is then directly formed on a first surface (110A, 310A, 510A) of the substrate (110, 310, 510) by a silicon thin film deposition process. A method of forming a thin film transistor (T1, T2, T3, T4, T5) includes the following steps. A first patterning process is performed on the thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) to form a semiconductor pattern (20P, 22P). Subsequently, a gate insulation layer (30, 32, 33, 34), a gate electrode (40G, 44G, 53G), a source electrode (40S, 43S, 60S, 64S) and a drain electrode (40D, 43D, 60D, 64D) are formed.