| 发明名称 |
METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES |
| 摘要 |
<p>Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.</p> |
| 申请公布号 |
EP2671247(A2) |
申请公布日期 |
2013.12.11 |
| 申请号 |
EP20120706356 |
申请日期 |
2012.01.27 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
GRABBE, ALEXIS;FLANNERY, LAWRENCE P. |
| 分类号 |
H01L21/322;H01L21/02;H01L21/762 |
主分类号 |
H01L21/322 |
| 代理机构 |
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| 地址 |
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