| 摘要 |
Aminodisilane described in the present application is unlimitedly utilized as precursors forming a stoichiometric and non-stoichiometric silicon containing layer such as amorphous silicon, crystalline silicon, silicon oxide, silicon oxycarbide, silicon nitride, silicon oxynitride, and silicone oxy the carboxynitride. For example, the precursors can be utilized as the dopant of the metal containing film. Typically, organic minodisilane precursors is a high-purity volatile precursors chemical material which are evaporated and transferred to a deposition chamber or a reactor as gas depositing the silicon containing film via a CVD or ALD process for a semiconductor device. [Reference numerals] (AA) Start: 156.6 °C;(BB) Residual mass: 1.71% (374.6 °C);(CC) Temperature / °C |
