| 摘要 |
<p>A method of producing a bulk semiconductor material 45 comprises the steps of providing a base 41 comprising a substantially planar substrate (e.g sapphire) having a plurality of etched nano/micro-structures 41,42 located on the substrate 41 each structure having an etched, substantially planar sidewall 41, wherein the plane of each said etched sidewall is arranged at an oblique angle to the substrate. The method also comprises selectively growing the bulk semiconductor material such as gallium nitride (GaN) onto the etched sidewall 41 of each nano/micro-structure using an epitaxial growth process. A layered semiconductor device may be grown onto the bulk semiconductor material.</p> |
