发明名称 |
MULTILAYER ELECTRONIC STRUCTURE WITH INTEGRAL FARADAY SHIELDING |
摘要 |
The present invention relates to a multilayer electronic support structure which includes at least one metal component which is surrounded with a dielectric. The present invention shields the metal component from the interference of an external electromagnetic field and includes at least one faraday barrier for preventing electromagnetic radiation from the metal component. |
申请公布号 |
KR20130135000(A) |
申请公布日期 |
2013.12.10 |
申请号 |
KR20120099337 |
申请日期 |
2012.09.07 |
申请人 |
ACCESS ADVANCED CHIP CARRIERS AND E-SUBSTRATE SOLUTIONS |
发明人 |
DROR HURWITZ |
分类号 |
H05K3/46;H01L21/60;H01L23/12 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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