发明名称 MULTILAYER ELECTRONIC STRUCTURE WITH INTEGRAL FARADAY SHIELDING
摘要 The present invention relates to a multilayer electronic support structure which includes at least one metal component which is surrounded with a dielectric. The present invention shields the metal component from the interference of an external electromagnetic field and includes at least one faraday barrier for preventing electromagnetic radiation from the metal component.
申请公布号 KR20130135000(A) 申请公布日期 2013.12.10
申请号 KR20120099337 申请日期 2012.09.07
申请人 ACCESS ADVANCED CHIP CARRIERS AND E-SUBSTRATE SOLUTIONS 发明人 DROR HURWITZ
分类号 H05K3/46;H01L21/60;H01L23/12 主分类号 H05K3/46
代理机构 代理人
主权项
地址