| 摘要 |
This invention discloses circuit and methods of a NAND-based 2T-string NOR flash cell structure as a building block for a fast random-read NOR flash memory. The key concept of this new set of bias conditions in cell array improves over the critical concern of punch-through issue when cell is migrating to the more advanced technology node of next generation. The invention adopts a novel preferable symmetrical 2T-string NOR flash cell. Each NAND or NAND like cell of this 2T-string NOR cell is to store 2 bits and is preferable to be made of N-channel device. The cell is preferable to use Fowler-Nordheim Tunneling scheme for both erase and program operations- The invention is to provide a novel 2T-string NOR flash cell structure made of N-channel device offering most flexible erase sizes in unit of byte, page, sector, block and chip with the least program and erase disturbances. |
