| 摘要 |
<p>When a deep drain and source area is formed in p-channel transistors having surface topography of active areas for hole areas which surround the active areas, the present invention is provided to use an inclined injection method with an inclined angle of less than 20 degrees, thereby performing an excellent performance. The inclined angle is an orientation angle for a gate electrode structure. Therefore, the present invention prevents excessive side dopant penetration to sensitive channel areas.</p> |
