| 摘要 |
A CMP polishing liquid according to an embodiment of the present invention comprises abrasive grains further comprising ceria grains and silica grains, a compound having a first acid dissociation constant of not more than 7 (excluding azoles), a basic compound, and persulfate. The PH of the CMP polishing liquid is 9.0-12.0. A method of polishing a semiconductor substrate according to an embodiment of the present invention is provided with a polishing process wherein a semiconductor substrate (300), which is provided with a substrate body (1) within which are formed hollow sections (3a, 3b) which are open only on a front surface (1a), conductive members (7) that are arranged within the hollow sections (3a, 3b) and that are to become TSVs (7a, 7b), and insulation layers (5a, 5b) arranged within the hollow sections (3a, 3b) and between the substrate body (1) and the conductive members (7), is polished from a back surface (1b) side using the CMP polishing liquid, making the conductive members (7) be exposed at the back-face (1b) side to form a penetrating electrode structure comprising the TSVs (7a, 7b). |
