发明名称 VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces false readout of data.SOLUTION: A voltage generating circuit includes: a first step-up circuit having a first capacitor element stepping up a first node in response to a first signal, a first transistor, a second transistor, a second capacitor element stepping up a second node in response to a second signal, and a third transistor; and a second step-up circuit having a third capacitor element stepping up a third node in response to a third signal complementary to the first signal, a fourth transistor, a fifth transistor, a fourth capacitor element stepping up a fourth node in response to a fourth signal complementary to the second signal, and a sixth transistor. A voltage in which a voltage at a second output node is stepped up is supplied to a gate of the third transistor, and a voltage in which a voltage at a first output node is stepped up is supplied to a gate of the sixth transistor.
申请公布号 JP2013247839(A) 申请公布日期 2013.12.09
申请号 JP20120122513 申请日期 2012.05.29
申请人 TOSHIBA CORP 发明人 KUMAZAKI NORIYASU;KAMIMURA MASASHI;MIDORIKAWA TATSURO
分类号 H02M3/07;G11C16/06;H01L21/822;H01L27/04 主分类号 H02M3/07
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