| 摘要 |
A semiconductor device (100) is provided with a substrate (10) and a TFT provided on the substrate. The TFT includes: a gate electrode (12); an oxide semiconductor layer (14) facing the gate electrode: a source electrode (16) and a drain electrode (18) connected to the oxide semiconductor layer; and an insulating layer (22) in contact with at least a part of the source electrode and the drain electrode. The insulating layer (22) includes a lower region (22b) in contact with at least a part of the source electrode and the drain electrode, and an upper region (22a) located above the lower region. The hydrogen content of the lower region (22b) is larger than the hydrogen content of the upper region (22a). |
